Our team at Lawrence Semiconductor, in collaboration with the University of Arkansas, has made significant progress in GeSn epitaxial film development using a commercial chemical vapor deposition (CVD) reactor. This exciting program in achieving strong direct bandgap luminescence in the mid-wave infrared (MWIR) region opens up new possibilities for applications in infrared detection, imaging, and illumination. Download the article below to learn more about the future of infrared optoelectronics and how GeSn might disrupt the market.