APPLICATIONS
We support a wide array of customer applications and end markets, including advanced CMOS, power electronics, silicon photonics, MEMS sensors, infrared imaging, and quantum computing.
Silicon Photonics
- Selective Ge for SWIR photodetectors and waveguides
- Tensile strained Ge for extended cut-off wavelength photodetectors to shift from C to L band at 1.6um
- SiGeSn for enhanced mobility hypercomputing, SWIR to MWIR (1.7-4um) photodetectors, LED and Lasers
- Quantum Confinement Stark Effect (QCSE) with SiGe/Ge Multi Quantum Well structures for optical modulators
Si-based Power Devices
- Thick n-type doped Si drift layers for power devices
- Thick PIN diodes for high power applications up to thousands of Volts
- Carbon-Doped Si:B and Si:P to reduce dopant diffusion in PIN structures
MEMS Sensors
- Poly silicon trench fill for through silicon vias (TSV)
- Thick epi-poly for MEMS applications
- Si:Ge:B stress tuning films for low bow low strain MEMS membranes
Quantum Computing
- Si Electron Spin Qubit channel in Si/SiGe Quantum Well FET structure
- Ge Hole Spin Qubit in Ge/SiGe QW FET structure
- High Purity Silicon-28 Epi services; available as a blanket Epi layer or as part of a Quantum Well FET structure
Virtual Substrates
- Thick graded buffer virtual substrate (TGB-VS)
- Thin constant composition virtual substrate (TCC-VS)
- Reverse graded buffer layer virtual substrate (RGB-VS)
CMOS Logic & RF
- Phosphorus doped Si for NMOS S/D stressor for enhanced mobility of n transistor channel
- Boron doped SiGe S/D stressor for enhanced mobility of p transistor channel
- Ge FETs on non-(100) substrates for high mobility FET channel
- Silicon on sapphire (SOS) for RF CMOS ICs and optoelectronics
Specialized Detectors
- Homoepitaxial Ge diodes for hard x-ray detectors
- Pure Boron on Si for EUV and VUV detectors
EXPERIENCE THE LAWRENCE DIFFERENCE
Contact us today to learn more about our epitaxial growth services and how we can support your business.